Nitride solar cell achieves peak EQE of 72%

Semiconductor Today

Figure 1: ASTM G173-03 AM1.5G reference spectrum. Shading represents effective response of UCSB device (370–410nm).

Figure 2: Schematic of UCSB InGaN/GaN solar cell

Figure 3: Measured absorption (solid), average (solid with error bars), maximum and minimum (dashed curves) EQE curves for (a) smoother and (b) rough samples. Average EQE and its standard deviation (error bars) were determined from measurements of 12 devices in the same area of the sample where the absorption was measured.

Device	Voc	Jsc	FF	Pmax	EQEpeak	IQEpeak
	V	mA/cm2	%	mW/cm2	%	%
Smooth	1.83	0.83	76.6	1.16	56	97
Rough	1.89	1.06	78.6	1.57	72	93

Table 1: Solar cell performance metrics.